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From Wafer to Chip
인쇄용 교육자료이수 확인란 포함Learn the flow of wafer manufacturing → oxidation → photolithography → etching → deposition → ion implantation → wiring → packaging.
There are no large semiconductor integrated factories (fabs) in the South Gyeongsang region. However, precision machining companies in Changwon and Gimhae are cutting semiconductor equipment parts, and chemical and gas processing facilities are located in Ulsan's chemical complex. Automotive electronics (ECU, sensors) and medical device assembly lines are already operating in clean rooms.
In other words, people who understand semiconductor process language are needed even without entering a fab. When a customer asks, "What is the particle specification for this part?" or "What is the required roughness (roughness) inside the chamber?" you need to understand what they mean in order to provide a quotation and pass the inspection.
The big picture consists of just two parts.
[Front-end — Fab] [Back-end — Assembly & Test]
Circuits are created on the wafer → Chips are cut, packaged, and tested
Clean room, hundreds of steps, 2-3 months Dicing, bonding, molding, testing| Order | Process | What It Does | In Simple Terms |
|---|---|---|---|
| 1 | Wafer Manufacturing | Silicon ingot growth → cutting → polishing to create mirror-like discs | Making paper |
| 2 | Oxidation | Oxygen and steam are passed at high temperatures to grow an insulating layer (SiO2) on the silicon surface | Primer coating |
| 3 | Photolithography | Apply photosensitive solution → transfer mask pattern with light → develop | Printing the design |
| 4 | Etching | Carve away the parts not covered by the photosensitive solution (dry = plasma / wet = chemical solution) | Carving |
| 5 | Deposition | Thin layers of insulating and metal films are deposited using CVD, PVD, ALD | Painting over |
| 6 | Ion Implantation | Accelerate impurities such as boron and phosphorus and implant them to give electrical properties | Giving properties |
| 7 | Metal Wiring | Connect components with copper or aluminum, stacking multiple layers | Laying wires |
| 8 | EDS·Packaging | Electrical testing of the wafer → cutting and assembling → final testing and shipment | Testing and packaging |
A common misunderstanding among new employees is that "you go through the 8 steps one by one in order." In reality, every time a layer is created, a set of photolithography → etching → deposition → (ion implantation if needed) is repeated, and this set is repeated dozens of times. The latest logic chips have more than 10 layers of metal wiring.
That's why it takes more than two months for a single wafer to go through a fab and come out. If even one step is done incorrectly in the middle, all the costs incurred so far are lost. This is why the semiconductor industry is especially strict about procedures.
If I had to pick one of the eight major processes, it would be photolithography. The reason is simple.
How thin a line can be drawn is summarized by the Rayleigh formula.
Resolution R = k1 × λ / NA
λ = Wavelength of light (shorter is better)
NA = Numerical aperture of the lens (larger is better)
k1 = Process coefficient (reduced by technology, theoretical lower limit 0.25)
[ArF Immersion] λ=193nm, NA=1.35, k1=0.3
R = 0.3 × 193 / 1.35 = 42.9nm
[EUV] λ=13.5nm, NA=0.33, k1=0.3
R = 0.3 × 13.5 / 0.33 = 12.3nmShortening the wavelength is the most certain method, so the exposure light source has been continuously getting shorter.
| Generation | Light Source | Wavelength | Features |
|---|---|---|---|
| i-line | Mercury lamp | 365nm | Still used in back-end and old lines |
| KrF | Excimer laser | 248nm | Mainly used in legacy processes |
| ArF | Excimer laser | 193nm | Currently the most widely used |
| ArF Immersion | ArF + water medium | 193nm | Fills the space between the lens and the wafer with water to achieve NA above 1 |
| EUV | Extreme ultraviolet | 13.5nm | Requires vacuum, reflective optics, used only in leading-edge processes |
The entire wafer is not printed at once. It is exposed in small shots, moving slightly and repeating the exposure. Initially, it used a stepper that stopped to expose and then moved, but now it uses a scanner that moves the mask and wafer in opposite directions at the same time.
The "5nm process" in "5nm process" is not an actual physical measurement, but a name indicating the generation. It's not a value measured with a ruler like a drawing dimension. In practice, what is managed is the CD (Critical Dimension, critical dimension), a real measured value.
> To exceed the limit, multi-patterning is used, where a layer is drawn twice or four times. As the number of processes increases, so do costs and chances of defects. This is why "miniaturization is not necessarily cost reduction."
| Step | What It Does | What Happens If Missed |
|---|---|---|
| Cleaning | Removes surface contaminants and organic materials | Pattern defects |
| HMDS Treatment | Makes the surface hydrophobic to improve adhesion of the photosensitive solution | Pattern detachment during development |
| PR Coating | Spins the wafer at high speed to evenly apply the photosensitive solution (spin coating) | Thickness variation → linewidth variation |
| Soft Bake | Removes solvents | Sticky residue, mask contamination |
| Exposure | Transfers the mask pattern using light | If the exposure dose is incorrect, the entire linewidth is off |
| PEB | Bakes after exposure to complete the reaction | Increases linewidth variation |
| Development | Dissolves the reacted (or unreacted) parts | Residual film, pattern collapse |
| Inspection | Measures CD and confirms overlay (inter-layer alignment) | If layers are misaligned, wiring may be disconnected |
Overlay is managed more strictly than linewidth. Even if you draw a thin line, if it's misaligned with the lower layer, the circuit won't connect.
| Process | Direction | Representative Method | What's Important on Site |
|---|---|---|---|
| Etching | Carving | Dry (plasma RIE), Wet (chemical immersion) | Anisotropy (vertical carving), Selectivity (only the desired film is carved) |
| Deposition | Depositing | CVD (chemical reaction), PVD (sputtering), ALD (atomic layer by layer) | Uniformity of thickness, coverage of steps |
| Ion Implantation | Implanting | Implant ions and activate them with heat treatment | Dose (amount) and energy (depth) |
Wet etching uses hydrofluoric acid (HF) solutions. Since it is very effective at dissolving oxide films, it is also extremely dangerous to humans.
> Hydrofluoric acid may not cause immediate pain if it comes into contact with the skin. Hours later, it can cause severe pain and damage to the bones, and if it comes into contact with a large area, it can cause hypocalcemia and even death. The most dangerous judgment is thinking, "It doesn't itch, so it's okay." Detailed response is covered in the clean room rules section.
| Misconception | Reality |
|---|---|
| "Semiconductor manufacturing is clean and safe" | It deals with strong acids and highly toxic gases. It has one of the highest chemical risks among manufacturing industries |
| "The equipment does everything automatically" | Alarm judgment, particle management, and anomaly detection are the responsibility of people |
| "I just need to do my own process well" | The wafer is the result of two months of accumulated processes. A mistake in the final step can ruin everything done before |
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